Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures

Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures

The inductively coupled plasma-enhanced atomic layer deposition (PEALD) method was used to fabricate ultrathin and smooth Pt thin films at low temperatures without the use of a Pt seed layer. The Pt thin metal films deposited at 200°C onto Si and glass substrates exhibited high conductivities (

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Bibliographische Detailangaben
Veröffentlicht in:Thin solid films 2014-09, Vol.566, p.93-98
Hauptverfasser: Liu, Bo-Heng, Huang, Hung Ji, Huang, Sheng-Hsin, Hsiao, Chien-Nan
Format: Artikel
Sprache:eng
Schlagworte:
Atomic-layer deposition
Catalysis
Catalysts: preparations and properties
Chemistry
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Deposition
Diffraction
Discharges for spectral sources (including inductively coupled plasmas)
Electric discharges
Exact sciences and technology
General and physical chemistry
Glass
Illumination
Inductively coupled plasma
Joining
Materials science
Methods of nanofabrication
Physical properties of thin films, nonelectronic
Physics
Physics of gases, plasmas and electric discharges
Physics of plasmas and electric discharges
Platinum
Silicon substrates
Spinning disk reactor
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Theory of reactions, general kinetics. Catalysis. Nomenclature, chemical documentation, computer chemistry
Thermal stability
thermal effects
Thin films
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Zusammenfassung:The inductively coupled plasma-enhanced atomic layer deposition (PEALD) method was used to fabricate ultrathin and smooth Pt thin films at low temperatures without the use of a Pt seed layer. The Pt thin metal films deposited at 200°C onto Si and glass substrates exhibited high conductivities (
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2014.07.031