16.1: Negative-Bias Photodegradation Mechanism in InGaZnO TFT

Recent studies have shown that IGZO are variously influenced by photoirradiation. In this study, by using measurement results of optical properties and calculation results, a relationship of defect levels in the IGZO films and the SiO2 films to negative‐bias photodegradation was examined, and the me...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.166-169
Hauptverfasser:	Tsubuku, Masashi, Watanabe, Ryosuke, Ishihara, Noritaka, Kishida, Hideyuki, Takahashi, Masahiro, Yamazaki, Shunpei, Kanzaki, Yohsuke, Matsukizono, Hiroshi, Mori, Shigeyasu, Matsuo, Takuya
Format:	Artikel
Sprache:	eng
Schlagworte:	AM-LCD CAAC defect levels Defects In-Ga-Zn-O Mathematical analysis Optical properties optical property oxide semiconductor Photodegradation reliability Semiconductor devices Silicon dioxide Technical papers Thin film transistors
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Recent studies have shown that IGZO are variously influenced by photoirradiation. In this study, by using measurement results of optical properties and calculation results, a relationship of defect levels in the IGZO films and the SiO2 films to negative‐bias photodegradation was examined, and the mechanism of the degradation was revealed.
ISSN:	0097-966X 2168-0159
DOI:	10.1002/j.2168-0159.2013.tb06169.x