Cathodoluminescence quantum yield of CdSe epilayers grown in a quasi-closed system

We have assessed the influence of growth process conditions and electron beam excitation density on the external quantum yield of cathodoluminescence in n -CdSe epilayers grown in a quasi-closed system. The highest external quantum yield (2.2% at a temperature of 78 K) has been offered by n -CdSe ep...

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Veröffentlicht in:Inorganic materials 2015, Vol.51 (1), p.5-10
Hauptverfasser: Senokosov, E. A., Chukita, V. I., Odin, I. N., Chukichev, M. V.
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Sprache:eng
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Zusammenfassung:We have assessed the influence of growth process conditions and electron beam excitation density on the external quantum yield of cathodoluminescence in n -CdSe epilayers grown in a quasi-closed system. The highest external quantum yield (2.2% at a temperature of 78 K) has been offered by n -CdSe epilayers grown under near-equilibrium high-temperature deposition conditions.
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168515010173