Cathodoluminescence quantum yield of CdSe epilayers grown in a quasi-closed system
We have assessed the influence of growth process conditions and electron beam excitation density on the external quantum yield of cathodoluminescence in n -CdSe epilayers grown in a quasi-closed system. The highest external quantum yield (2.2% at a temperature of 78 K) has been offered by n -CdSe ep...
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Veröffentlicht in: | Inorganic materials 2015, Vol.51 (1), p.5-10 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | We have assessed the influence of growth process conditions and electron beam excitation density on the external quantum yield of cathodoluminescence in
n
-CdSe epilayers grown in a quasi-closed system. The highest external quantum yield (2.2% at a temperature of 78 K) has been offered by
n
-CdSe epilayers grown under near-equilibrium high-temperature deposition conditions. |
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ISSN: | 0020-1685 1608-3172 |
DOI: | 10.1134/S0020168515010173 |