Ferroelectric tunnel junction for memory and logic design
Ferroelectric tunnel junction (FTJ) is an emerging nonvolatile binary data storage device. Unlike conventional tunnel junctions, FTJ is switched via a pure electronic mechanism, and it exhibits higher OFF/ON resistance ratio and larger resistance-area product. Considering great potential of FTJ as n...
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| Veröffentlicht in: | Europhysics news 2014-04, Vol.45 (2), p.15-15 |
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| container_title | Europhysics news |
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| creator | Wang, Z H Zhao, W S Kang, W Bouchenak-Khelladi, A Zhang, Y Klein, J-O Ravelosona, D Chappert, C |
| description | Ferroelectric tunnel junction (FTJ) is an emerging nonvolatile binary data storage device. Unlike conventional tunnel junctions, FTJ is switched via a pure electronic mechanism, and it exhibits higher OFF/ON resistance ratio and larger resistance-area product. Considering great potential of FTJ as next generation memory, the authors aimed to develop the first compact model of FTJ for associated circuits design and simulation. |
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| ispartof | Europhysics news, 2014-04, Vol.45 (2), p.15-15 |
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| subjects | Circuit design Computer simulation Electronics Ferroelectric materials Ferroelectricity Logic design News Tunnel junctions |
| title | Ferroelectric tunnel junction for memory and logic design |
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