Ferroelectric tunnel junction for memory and logic design

Ferroelectric tunnel junction for memory and logic design

Ferroelectric tunnel junction (FTJ) is an emerging nonvolatile binary data storage device. Unlike conventional tunnel junctions, FTJ is switched via a pure electronic mechanism, and it exhibits higher OFF/ON resistance ratio and larger resistance-area product. Considering great potential of FTJ as n...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Europhysics news 2014-04, Vol.45 (2), p.15-15
Hauptverfasser: Wang, Z H, Zhao, W S, Kang, W, Bouchenak-Khelladi, A, Zhang, Y, Klein, J-O, Ravelosona, D, Chappert, C
Format: Artikel
Sprache:eng
Schlagworte:
Circuit design
Computer simulation
Electronics
Ferroelectric materials
Ferroelectricity
Logic design
News
Tunnel junctions
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Ferroelectric tunnel junction (FTJ) is an emerging nonvolatile binary data storage device. Unlike conventional tunnel junctions, FTJ is switched via a pure electronic mechanism, and it exhibits higher OFF/ON resistance ratio and larger resistance-area product. Considering great potential of FTJ as next generation memory, the authors aimed to develop the first compact model of FTJ for associated circuits design and simulation.
ISSN:0531-7479
1432-1092