Fabrication of spray-printed organic non-volatile memory devices for low cost electronic applications
•PS:PCBM-based organic non-volatile memory devices was fabricated using spray printing.•The thickness of the film was controlled by adjusting the concentration of the PS:PCBM solutions.•The roughness of spray-printed films was poorer than that of the spin-coated film.•The minimum thickness of the pr...
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Veröffentlicht in: | Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2015-01, Vol.191, p.51-56 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | •PS:PCBM-based organic non-volatile memory devices was fabricated using spray printing.•The thickness of the film was controlled by adjusting the concentration of the PS:PCBM solutions.•The roughness of spray-printed films was poorer than that of the spin-coated film.•The minimum thickness of the printed film influenced the memory behavior more than the surface roughness.•The spray printed PS:PCBM showed excellent unipolar switching, reliability, retention, and endurance characteristics.
We fabricated polystyrene (PS) and 6-phenyl-C61 butyric acid methyl ester (PCBM) based organic non-volatile memory devices using a spray printing technique. Due to the distinct operational properties of this technique, significant differences were observed in the macro- and microscopic features (e.g., the film quality and surface roughness) of the devices. The thickness of the film was successfully controlled by adjusting the concentration of the PS:PCBM solutions sprayed. Although the roughness of the spray-printed films was poorer than that of the spin-coated film, negligible differences were observed in the basic memory characteristics (e.g., the operation voltage range, turn on and off voltage, retention and endurance). In particular, the printing-based organic memory devices were successfully switched, as exhibited by the on/off ratio greater than two orders of magnitude at 0.3V read voltage. The resistance state of all of the devices was maintained for more than 104s, indicating their non-volatile characteristics. |
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ISSN: | 0921-5107 1873-4944 |
DOI: | 10.1016/j.mseb.2014.10.010 |