Reactive high power impulse magnetron sputtering of CFx thin films in mixed Ar/CF4 and Ar/C4F8 discharges

The reactive high power impulse magnetron sputtering processes of carbon in argon/tetrafluoromethane (CF4) and argon/octafluorocyclobutane (c-C4F8) have been characterized. Amorphous carbon fluoride (CFx) films were synthesized at deposition pressure and substrate temperature of 400mPa and 110°C, re...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Thin solid films 2013-09, Vol.542, p.21-30
Hauptverfasser:	Schmidt, S., Goyenola, C., Gueorguiev, G.K., Jensen, J., Greczynski, G., Ivanov, I.G., Czigány, Zs, Hultman, L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Abundance c-C4F8 Carbon Carbon fluoride Carbon tetrafluoride Composition and phase identification Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Droplets Exact sciences and technology First principle calculations Fluorine High power impulse magnetron sputtering Magnetron sputtering Materials science Mechanical and acoustical properties Methods of deposition of films and coatings film growth and epitaxy Partial pressure Physical properties of thin films, nonelectronic Physics Positive ion mass spectrometry Precursors Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Tetrafluoromethane Thin film structure and morphology Thin films X-ray photoelectron spectroscopy
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The reactive high power impulse magnetron sputtering processes of carbon in argon/tetrafluoromethane (CF4) and argon/octafluorocyclobutane (c-C4F8) have been characterized. Amorphous carbon fluoride (CFx) films were synthesized at deposition pressure and substrate temperature of 400mPa and 110°C, respectively. The CFx film composition was controlled in the range of 0.15
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2013.05.165