Highly conductive SnO2 thin films deposited by atomic layer deposition using tetrakis-dimethyl-amine-tin precursor and ozone reactant

Highly conductive SnO2 thin films were grown by atomic layer deposition (ALD) in a wide growth temperature range (50°C–250°C), using a tetrakis-dimethyl-amine tin (TDMASn) precursor and an ozone reactant. The ozone SnO2 ALD thin films showed excellent electrical properties (5.63×10−4Ωcm) over 200°C, but the electrical properties of the films were not measured at low growth temperature (under 125°C). In order to verify the origin of the electrical properties as a function of growth temperature, the growth behavior and chemical bonding states, film crystallinity, surface roughness, and optical properties were examined. The ALD ozone SnO2 thin films deposited above the 200°C growth temperature had high carrier concentration (3.2×1020–1.2×1021) and Hall mobility (~32cm2V/s). Also, films deposited at 250°C exhibited a polycrystalline structure and high transmittance (over 80% at 550nm wavelength). As a transparent conductive oxide material, the film properties of ALD ozone SnO2 thin films are very suitable due to their excellent high conductivity and reasonable transmittance. •The highly conductive SnO2 thin films were deposited by atomic layer deposition (ALD) using an ozone reactant.•The ozone reactant in SnO2 ALD leads to low deposition temperatures (50–250°C) and high throughput.•ALD SnO2 thin films showed extremely low resistivity (5.63×10−4Ωcm) and reasonable transmittance (over 80%).