Effect of substrate roughness and working pressure on photocatalyst of N-doped TiO x films prepared by reactive sputtering with air

N-doped TiO x films on the glass substrate were prepared by radio-frequency (RF) magnetron reactive sputtering of Ti target in a mixed gas of argon and dry air. The effect of substrate roughness and working pressure on the physical properties and the photocatalytic properties of the N-doped TiO x films was investigated. The surface roughness of glass substrate has little influence on the film properties such as produced phases, lattice parameters, introduced nitrogen contents, and atomic bonding configurations, but significant influence on the surface roughness of film resulting in the variation of the photocatalytic ability. The working pressure has little influence on the produced phases and the atomic bonding configurations, but significant influence on the atomic concentration of the N-doped TiO x film, resulting in the large variation of optical, structural, and photocatalytic properties. It is suggested that the high photocatalysis of N-doped TiO x film requires a certain range of the N doping concentration which shows the interstitial complex N doping states in TiO2.