P-10: Oxide TFT Fabrication by Nano-Rheology Printing for Display Application

P-10: Oxide TFT Fabrication by Nano-Rheology Printing for Display Application

A nano‐rheology printing method was used to fabricate oxide thin‐film transistors (TFTs). This method utilizes the rheological properties of oxide precursor gels that are imprinted at an elevated temperature. TFTs designed for an active matrix array were successfully developed with high alignment ac...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2014-06, Vol.45 (1), p.979-982
Hauptverfasser: Koyama, Hiroaki, Fukada, Kazuhiro, Murakami, Yoshitaka, Tue, Phan Trong, Tanaka, Shogo, Inoue, Satoshi, Shimoda, Tatsuya
Format: Artikel
Sprache:eng
Schlagworte:
Arrays
nano-rheology printing
Nanostructure
oxide TFT
Oxides
Precursors
printed electronics
printed TFT
Printing
Rheology
Semiconductor devices
Thin film transistors
Transistors
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Beschreibung
Zusammenfassung:A nano‐rheology printing method was used to fabricate oxide thin‐film transistors (TFTs). This method utilizes the rheological properties of oxide precursor gels that are imprinted at an elevated temperature. TFTs designed for an active matrix array were successfully developed with high alignment accuracy, and the operation of its transistors was confirmed.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2014.tb00254.x