Structural and electrical properties of the europium-doped indium zinc oxide thin film transistors

The EuInZnO (EIZO) thin film transistor (TFT) devices were fabricated by the sol–gel spin-coating technique. The EIZO TFT operates in the n-channel depletion mode and exhibits a well-defined pinch-off and saturation region. Because europium ion possesses lower electronegativity (1.2) and standard electrode potential (−1.991V), it can act as the carrier suppressor to reduce the carrier concentrations of the IZO (In:Zn=1:1) thin film. Eu3+ (13mol%)-doped IZO TFT possesses the optimum performance, and its field-effect mobility in the saturated regime, threshold voltage, on–off ratio, and S-factor are 1.23cm2/Vs, 3.28V, 1.07×106, and 2.28V/decade, respectively. •Europium ions can act as the carrier suppressor in the InZnO system.•The EuInZnO forms an n-channel material for the thin film transistor (TFT) device.•The optimum performance of the EuInZnO TFT is the sample with 13mol% Eu3+ doping.