The influence of inelastic scattering on EFTEM images—exemplified at 20kV for graphene and silicon

We present model-based image simulations for zero-loss and plasmon-loss filtered images at 20kV for graphene and silicon based on the mutual coherence approach. In addition, a new approximation for the mixed dynamic form factor is introduced. In our calculation multiple elastic scattering and one in...

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Veröffentlicht in:	Ultramicroscopy 2013-11, Vol.134, p.102-112
Hauptverfasser:	Lee, Z., Rose, H., Hambach, R., Wachsmuth, P., Kaiser, U.
Format:	Artikel
Sprache:	eng
Schlagworte:	Approximation Attenuation Computer simulation EFTEM Graphene Inelastic scattering Low voltage Low-loss Mathematical analysis Mutual coherence Silicon Zero-loss
Online-Zugang:	Volltext
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