The influence of inelastic scattering on EFTEM images—exemplified at 20kV for graphene and silicon

We present model-based image simulations for zero-loss and plasmon-loss filtered images at 20kV for graphene and silicon based on the mutual coherence approach. In addition, a new approximation for the mixed dynamic form factor is introduced. In our calculation multiple elastic scattering and one in...

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Veröffentlicht in:Ultramicroscopy 2013-11, Vol.134, p.102-112
Hauptverfasser: Lee, Z., Rose, H., Hambach, R., Wachsmuth, P., Kaiser, U.
Format: Artikel
Sprache:eng
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Zusammenfassung:We present model-based image simulations for zero-loss and plasmon-loss filtered images at 20kV for graphene and silicon based on the mutual coherence approach. In addition, a new approximation for the mixed dynamic form factor is introduced. In our calculation multiple elastic scattering and one inelastic scattering are taken into account. The simulation shows that even the intensity of zero-loss filtered image is attenuated by the interference between inelastically scattered waves. Moreover, the intensity of plasmon-loss filtered images cannot be neglected, either. •EFTEM images are calculated based on the mutual coherence approach, and a new approximation is introduced to factorize the MDFF.•Then intensity of the zero-loss filtered images is attenuated by the interference between the inelastically scattered waves.•The intensity of plasmon-loss filtered images cannot be neglected.
ISSN:0304-3991
1879-2723
DOI:10.1016/j.ultramic.2013.05.020