4.2: Invited Paper: Development of High Mobility Zinc Oxynitride Thin Film Transistors

4.2: Invited Paper: Development of High Mobility Zinc Oxynitride Thin Film Transistors

Possible mechanisms to achieve high mobility in zinc oxynitride (ZnON) have been investigated by comparison with other thin film semiconductors. Integrated processes to fabricate ZnON TFTs have been developed. Issues and challenges encountered at current stage will be discussed.

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Bibliographische Detailangaben
Veröffentlicht in:SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.14-17
Hauptverfasser: Ye, Yan, Lim, Rodney, You, Harvey, Scheer, Evelyn, Gaur, Anshu, Hsu, Hao-chien, Liu, Jian, Yim, Dong Kil, Hosokawa, Aki, White, John M.
Format: Artikel
Sprache:eng
Schlagworte:
electron carrier transport
Oxynitrides
potential barrier
Semiconductor devices
Semiconductors
Technical papers
TFT
Thin film transistors
Thin films
Zinc
Zinc oxynitride
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Beschreibung
Zusammenfassung:Possible mechanisms to achieve high mobility in zinc oxynitride (ZnON) have been investigated by comparison with other thin film semiconductors. Integrated processes to fabricate ZnON TFTs have been developed. Issues and challenges encountered at current stage will be discussed.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2013.tb06127.x