Preparation and characterization of Cu-doped TiO2 thin films and effects on platelet adhesion

In the present study, Cu-doped (1, 2, 5 and 10wt.%) TiO2 thin films were prepared on silicon wafers via sol–gel method and dip coating process. The prepared thin films were thermally treated at 450°C for 1h with a heating rate of 2°C/min. The microstructures of synthesized thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), water contact angle measurement (WCA), and X-ray photoelectron spectroscopy (XPS). XRD results showed that the as-prepared thin films were mainly in anatase phase. XPS analysis indicated that Cu2O transformed into CuO with increasing content of copper. Such doped surfaces showed the ability of catalytic decomposition of exogenous donor S-nitroso-N-acetyl-penicillamine (SNAP) to generate nitric oxide (NO). Based on SEM and fluorescence analysis results, such films had the ability to inhibit platelet adhesion and activation with SNAP in vitro. This study suggested that the films were capable of generating physiological levels of NO in the presence of endogenous donor S-nitrosothiols (RSNO) when in contact with blood. So the films may be useful to improve the hemocompatibility of blood contact devices. •The Cu doped TiO2 thin films are successfully prepared on silicon surface via sol–gel method.•The doped Cu element in the TiO2 thin films survived mainly in Cu2+ (CuO) state.•The Cu doped TiO2 thin films could induce SNAP release NO compared with the non-doped TiO2 thin films.•The Cu doped TiO2 thin films could inhibit platelet adhesion/activation via inducing NO release.