70.2L: Late-News Paper: 14.7" Active Matrix PHOLED Displays on Temporary Bonded PEN Substrates with Low Temperature IGZO TFTs

70.2L: Late-News Paper: 14.7" Active Matrix PHOLED Displays on Temporary Bonded PEN Substrates with Low Temperature IGZO TFTs

A flexible, 14.7 inch diagonal organic light emitting diode display has been successfully demonstrated. Device fabrication of the thin film transistor backplane occurred below 200 °C on a polyethylene naphthalate substrate using indium gallium zinc oxide with a saturation mobility of 13.5 cm2/V‐s as...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.447-450
Hauptverfasser: O'Brien, Barry, Lee, Yong Kyun, Marrs, Michael, Smith, Joseph, Strnad, Mark, Forsythe, Eric, Morton, David
Format: Artikel
Sprache:eng
Schlagworte:
Bonding
Displays
flexible display
Indium
mixed oxide thin film transistor
organic light emitting diode
Organic light emitting diodes
plastic substrate
Saturation
Semiconductor devices
Semiconductors
Thin film transistors
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Beschreibung
Zusammenfassung:A flexible, 14.7 inch diagonal organic light emitting diode display has been successfully demonstrated. Device fabrication of the thin film transistor backplane occurred below 200 °C on a polyethylene naphthalate substrate using indium gallium zinc oxide with a saturation mobility of 13.5 cm2/V‐s as the active semiconductor.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2013.tb06243.x