10.1: High Mobility Self-Aligned Top-Gate Oxide TFT for High-Resolution AM-OLED
High mobility and highly reliable self‐aligned top‐gate oxide TFTs were developed using the aluminum reaction method. Al diffusion to the oxide semiconductor and homogenization of the oxygen concentration in the depth direction after annealing was confirmed by laser‐assisted atom probe tomography. T...
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| Veröffentlicht in: | SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.85-88 |
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| creator | Morosawa, Narihiro Nishiyama, Masanori Ohshima, Yoshihiro Sato, Ayumu Terai, Yasuhiro Tokunaga, Kazuhiko Iwasaki, Junji Akamatsu, Keiichi Kanitani, Yuya Tanaka, Shinji Arai, Toshiaki Nomoto, Kazumasa |
| description | High mobility and highly reliable self‐aligned top‐gate oxide TFTs were developed using the aluminum reaction method. Al diffusion to the oxide semiconductor and homogenization of the oxygen concentration in the depth direction after annealing was confirmed by laser‐assisted atom probe tomography. The high mobility of the top‐gate TFT with a‐ITZO channel was demonstrated to be 32 cm2/Vs. A 9.9‐inch diagonal qHD AM‐OLED display was fabricated using a five‐mask backplane process to demonstrate an applicable solution for large size and high‐resolution AM‐OLEDs. |
| doi_str_mv | 10.1002/j.2168-0159.2013.tb06147.x |
| format | Article |
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| ispartof | SID International Symposium Digest of technical papers, 2013-06, Vol.44 (1), p.85-88 |
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| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Aluminum Channels Diffusion Diodes Field programmable gate arrays Homogenizing Oxides Semiconductor devices Semiconductors Thin film transistors |
| title | 10.1: High Mobility Self-Aligned Top-Gate Oxide TFT for High-Resolution AM-OLED |
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