10.1: High Mobility Self-Aligned Top-Gate Oxide TFT for High-Resolution AM-OLED

10.1: High Mobility Self-Aligned Top-Gate Oxide TFT for High-Resolution AM-OLED

High mobility and highly reliable self‐aligned top‐gate oxide TFTs were developed using the aluminum reaction method. Al diffusion to the oxide semiconductor and homogenization of the oxygen concentration in the depth direction after annealing was confirmed by laser‐assisted atom probe tomography. T...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.85-88
Hauptverfasser: Morosawa, Narihiro, Nishiyama, Masanori, Ohshima, Yoshihiro, Sato, Ayumu, Terai, Yasuhiro, Tokunaga, Kazuhiko, Iwasaki, Junji, Akamatsu, Keiichi, Kanitani, Yuya, Tanaka, Shinji, Arai, Toshiaki, Nomoto, Kazumasa
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum
Channels
Diffusion
Diodes
Field programmable gate arrays
Homogenizing
Oxides
Semiconductor devices
Semiconductors
Thin film transistors
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Zusammenfassung:High mobility and highly reliable self‐aligned top‐gate oxide TFTs were developed using the aluminum reaction method. Al diffusion to the oxide semiconductor and homogenization of the oxygen concentration in the depth direction after annealing was confirmed by laser‐assisted atom probe tomography. The high mobility of the top‐gate TFT with a‐ITZO channel was demonstrated to be 32 cm2/Vs. A 9.9‐inch diagonal qHD AM‐OLED display was fabricated using a five‐mask backplane process to demonstrate an applicable solution for large size and high‐resolution AM‐OLEDs.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2013.tb06147.x