P-9: Study of the Origin of Major Donor States in Oxide Semiconductor

P-9: Study of the Origin of Major Donor States in Oxide Semiconductor

The investigation of donor states is an important issue for characteristics and reliability of FETs. We succeeded in identifying the origin of donor states of InGaZnO through experiments and calculations. In addition, the number of photomasks is reduced by applying this mechanism.

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Veröffentlicht in:SID International Symposium Digest of technical papers 2014-06, Vol.45 (1), p.975-978
Hauptverfasser: Oota, Masashi, Ishihara, Noritaka, Nakashima, Motoki, Kurosawa, Yoichi, Hirohashi, Takuya, Takahashi, Masahiro, Yamazaki, Shunpei, Obonai, Toshimitsu, Hosaka, Yasuharu, Koezuka, Junichi, Kanzaki, Yohsuke, Matsukizono, Hiroshi, Kaneko, Seiji, Matsuo, Takuya
Format: Artikel
Sprache:eng
Schlagworte:
Bills
Mathematical analysis
Origins
Oxides
Photomasks
Roads & highways
Semiconductors
Technical papers
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Zusammenfassung:The investigation of donor states is an important issue for characteristics and reliability of FETs. We succeeded in identifying the origin of donor states of InGaZnO through experiments and calculations. In addition, the number of photomasks is reduced by applying this mechanism.
ISSN:0097-966X
2168-0159
DOI:10.1002/j.2168-0159.2014.tb00253.x