P-20: Performance Improvement for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistors

In this work, the relation between post annealing temperature and electrical characteristic on high mobility a‐IZTO TFTs was investigated. The 400°C‐annealed a‐IZTO TFTs exhibited a better performance with field effect mobility of 39.6 cm2/Vs, Vth of ‐2.8 V and sub‐threshold swing of 0.25 V/decade. Both shallow trap states of a‐IZTO film and interface trap states at the a‐IZTO/SiO2 interface decreased to 2.16 × 1017 cm−3eV−1 and 4.38 × 1012 cm−2eV−1, respectively with 400°C annealing. Owing to the higher energy from annealing process, the structural relaxation can be enhanced leading a better electrical characteristic of a‐IZTO TFTs.