23.4: Delamination Effect on Flexible LTPS-TFTs

A flexible TFT employing ultra‐low‐temperature process (< 400 degree‐C) was demonstrated. Two impacts after delamination were observed, including threshold voltage shift and punch‐through‐like deterioration. Scenarios regarding gate insulator quality and carrier injection was proposed and discuss...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2013-06, Vol.44 (1), p.279-282
Hauptverfasser:	Lu, Ssu-Hui, Lee, Ming-Hsien, Hsu, Yuan-Jun, Peng, Chia-Tien
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier injection Delaminating Delamination Deterioration Flexible Displays Gates Insulators Low Temperature Poly Silicon (LTPS) Technical papers Thin film transistors
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A flexible TFT employing ultra‐low‐temperature process (< 400 degree‐C) was demonstrated. Two impacts after delamination were observed, including threshold voltage shift and punch‐through‐like deterioration. Scenarios regarding gate insulator quality and carrier injection was proposed and discussed.
ISSN:	0097-966X 2168-0159
DOI:	10.1002/j.2168-0159.2013.tb06200.x