Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

Near-ultraviolet （UV） InGaN/AIGaN light-emitting diodes （LEDs） are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-OaN micro-rods are formed above the interface of p-A1GaN//p-OaN due to the rapid growth rate of p-OaN in the vertical direction. The p-OaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electrolumi- nescence intensities of the 372nm UV LED lamps with p-OaN micro rods are 88% higher than those of the i/at surface LED samples.