X-ray microfluorescence (μXRF) imaging of Aspergillus nidulans cell wall mutants reveals biochemical changes due to gene deletions
We used synchrotron X-ray fluorescence to create the first semiquantitative, submicron resolution, element distribution maps of P, S, K, and Ca, in situ, in fungal samples. Data collection was performed at the European Synchrotron Radiation Facility beam line ID21, Grenoble, France. We studied devel...
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Veröffentlicht in: | Analytical and bioanalytical chemistry 2014-05, Vol.406 (12), p.2809-2816 |
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Zusammenfassung: | We used synchrotron X-ray fluorescence to create the first semiquantitative, submicron resolution, element distribution maps of P, S, K, and Ca, in situ, in fungal samples. Data collection was performed at the European Synchrotron Radiation Facility beam line ID21, Grenoble, France. We studied developing hyphae, septa, and conidiophores in
Aspergillus nidulans
, comparing wild type and two cell wall biosynthesis gene deletion strains. The latter encode sequential enzymes for biosynthesis of galactofuranose, a minor wall carbohydrate. Each gene deletion caused hyphal morphogenesis defects, and reduced both colony growth and sporulation 500-fold. Elemental imaging has helped elucidate biochemical changes in the phenotype induced by the gene deletions that were not apparent from morphological examination. Here, we examined S as a proxy for protein content, P for nucleic acid content, as well as Ca and K, which also have important metabolic roles. Element distributions in wild-type fungi reflect biological aspects already known or expected from other types of analysis; however, the application of X-ray fluorescence (XRF) imaging reveals aspects of gene deletion phenotypes that were not previously available. We have demonstrated that deleting a dispensable gene involved in galactose metabolism (
ugeA
) and one involved in biosynthesis of a minor cell wall component (
ugmA
) led to changes in hyphal elemental distribution that may have resulted from compromised wall composition. |
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ISSN: | 1618-2642 1618-2650 |
DOI: | 10.1007/s00216-014-7726-7 |