First-principles molecular dynamics investigation of thermal and mechanical stability of the TiN(001)/AlN and ZrN(001)/AlN heterostructures

First-principles quantum molecular dynamics investigations of TiN(001)/AlN and ZrN(001)/AlN heterostructures with one and two monolayers (1 ML and 2 ML) of AlN interfacial layers were carried out in the temperature range of 0–1400K with subsequent static relaxation. It is shown that the epitaxially...

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Veröffentlicht in:Thin solid films 2014-08, Vol.564, p.284-293
Hauptverfasser: Ivashchenko, V.I., Veprek, S., Turchi, P.E.A., Shevchenko, V.I., Leszczynski, J., Gorb, L., Hill, F.
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Sprache:eng
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Zusammenfassung:First-principles quantum molecular dynamics investigations of TiN(001)/AlN and ZrN(001)/AlN heterostructures with one and two monolayers (1 ML and 2 ML) of AlN interfacial layers were carried out in the temperature range of 0–1400K with subsequent static relaxation. It is shown that the epitaxially stabilized cubic B1-AlN interfacial layers are preserved in all TiN(001)/AlN heterostructures over the whole temperature range. In the ZrN(001)/AlN heterostructures, the B1-AlN(001) interfacial layer exists at 0K, but it transforms into a distorted one at 10K consisting of tetrahedral AlN4, octahedral AlN6, and AlN5 units. The thermal stability of the interfaces was investigated by studying the phonon dynamic stability of the B1-AlN phase with different lattice parameters. The calculations showed that the B1-AlN interface should be unstable in ZrN(001)/AlN heterostructures and nanocomposites, and in those based on transition metal nitrides with lattice parameters larger than 4.4Å. Electronic band structure calculations showed that energy gap forms around the Fermi energy for all interfaces. The formation of the interfacial AlN layer in TiN and ZrN crystals reduces their ideal tensile and shear strengths. Upon tensile load, decohesion occurs between Ti (Zr) and N atoms adjacent to the 1 ML AlN interfacial layer, whereas in the case of 2 ML AlN it occurs inside the TiN and ZrN slabs. The experimentally reported strength enhancement in the TiN/AlN and ZrN/AlN heterostructures is attributed to impeding effect of the interfacial layer on the plastic flow. •First-principles quantum molecular dynamics studies were conducted.•TiN- and ZrN-based heterostructures with one and two AlN interfacial layers.•Stability and structural transformation between 0 and 1400K have been calculated.•Stress–strain relationships and ideal strengths determined.•Systems which may form stable superhard heterostructures are identified.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2014.05.036