Effective bond strength of pyrex thin film TE bonds for microstructure applications

Effective bond strength of pyrex thin film TE bonds for microstructure applications

Thermoelectric (TE) bonds between two silicon wafers have been formed using sputtered Pyrex films. The bond area was defined by patterning and etching reliefs into a silicon wafer. The bond geometry was varied from square to circular annuli with varying widths, diameters, and corner rounding. Bond s...

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Bibliographische Detailangaben
Hauptverfasser: Stratton, T.G., Burns, D.W., Speldrich, B.D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Geometry
Semiconductor films
Shape
Silicon
Sputter etching
Sputtering
Tellurium
Thermoelectricity
Transistors
Wafer bonding
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Zusammenfassung:Thermoelectric (TE) bonds between two silicon wafers have been formed using sputtered Pyrex films. The bond area was defined by patterning and etching reliefs into a silicon wafer. The bond geometry was varied from square to circular annuli with varying widths, diameters, and corner rounding. Bond strengths were determined as a faction of bond shape and size. From rupture pressure measurements an empirical statistical model which allows prediction of bond strength as a function of bond geometry has been developed for thin film TE bonds.< >
DOI:10.1109/SOLSEN.1992.228270