Controlled Doping of Large-Area Trilayer MoS2 with Molecular Reductants and Oxidants

Controlled Doping of Large-Area Trilayer MoS2 with Molecular Reductants and Oxidants

Highly uniform large‐area MoS2 is chemically doped using molecular reductants and oxidants. Electrical measurements, photoemission, and Raman spectroscopy are used to study the doping effect and to understand the underlying mechanism. Strong work‐function changes of up to ±1 eV can be achieved, with...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2015-02, Vol.27 (7), p.1175-1181
Hauptverfasser: Tarasov, Alexey, Zhang, Siyuan, Tsai, Meng-Yen, Campbell, Philip M., Graham, Samuel, Barlow, Stephen, Marder, Seth R., Vogel, Eric M.
Format: Artikel
Sprache:eng
Schlagworte:
2D materials
chemical doping
field-effect transistors
molybdenum disulfide
redox-active species
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Highly uniform large‐area MoS2 is chemically doped using molecular reductants and oxidants. Electrical measurements, photoemission, and Raman spectroscopy are used to study the doping effect and to understand the underlying mechanism. Strong work‐function changes of up to ±1 eV can be achieved, with contributions from state filling and surface dipoles. This results in high doping densities of up to ca. 8 × 1012 cm−2.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201404578