Solution-Processed Highly Conductive PEDOT:PSS/AgNW/GO Transparent Film for Efficient Organic-Si Hybrid Solar Cells

Hybrid solar cells based on n-Si/poly­(3,4-ethylenedioxythiophene):poly­(styrene- sulfonate) (PEDOT:PSS) heterojunction promise to be a low cost photovoltaic technology by using simple device structure and easy fabrication process. However, due to the low conductivity of PEDOT:PSS, a metal grid depo...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS applied materials & interfaces 2015-02, Vol.7 (5), p.3272-3279
Hauptverfasser: Xu, Qiaojing, Song, Tao, Cui, Wei, Liu, Yuqiang, Xu, Weidong, Lee, Shuit-Tong, Sun, Baoquan
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Hybrid solar cells based on n-Si/poly­(3,4-ethylenedioxythiophene):poly­(styrene- sulfonate) (PEDOT:PSS) heterojunction promise to be a low cost photovoltaic technology by using simple device structure and easy fabrication process. However, due to the low conductivity of PEDOT:PSS, a metal grid deposited by vacuum evaporation method is still required to enhance the charge collection efficiency, which complicates the device fabrication process. Here, a solution-processed graphene oxide (GO)-welded silver nanowires (AgNWs) transparent conductive electrode (TCE) was employed to replace the vacuum deposited metal grid. A unique “sandwich” structure was developed by embedding an AgNW network between PEDOT:PSS and GO with a figure-of-merit of 8.6 × 10–3 Ω–1, which was even higher than that of sputtered indium tin oxide electrode (6.6 × 10–3 Ω–1). A champion power conversion efficiency of 13.3% was achieved, because of the decreased series resistance of the TCEs as well as the enhanced built-in potential (V bi) in the hybrid solar cells. The TCEs were obtained by facile low-temperature solution process method, which was compatible with cost-effective mass production technology.
ISSN:1944-8244
1944-8252
DOI:10.1021/am508006q