25 Gbit/s 100 degree C operation of highly reliable InGaAs/GaAsP-VCSELs

A 1.1 mu m-range high-speed oxide-VCSELs with InGaAs/GaAsP strain-compensated multiple quantum wells have been developed. The 25 Gbit/s 100 degrees Celsius operation and a high reliability over 3,000 h under 150 degrees Celsius were demonstrated.

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Bibliographische Detailangaben
Veröffentlicht in:	Electronics letters 2009-01, Vol.45 (1), p.1-1
Hauptverfasser:	Hatakeyama, H, Akagawa, T, Fukatsu, K, Suzuki, N, Tokutome, K, Yashiki, K, Anan, T, Tsuji, M
Format:	Artikel
Sprache:	eng
Schlagworte:	High speed Quantum wells
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	A 1.1 mu m-range high-speed oxide-VCSELs with InGaAs/GaAsP strain-compensated multiple quantum wells have been developed. The 25 Gbit/s 100 degrees Celsius operation and a high reliability over 3,000 h under 150 degrees Celsius were demonstrated.
ISSN:	0013-5194 1350-911X