InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer
What is believed to be the first InGaP/GaAs heterojunction bipolar transistor grown on SiGe/Si substrate is reported. The collectoremitter offset voltage and the knee voltage of the device are ∼150 mV and
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| Veröffentlicht in: | Electronics letters 2008-01, Vol.44 (3), p.1-1 |
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| container_title | Electronics letters |
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| creator | Lew, K L Yoon, S F Tanoto, H Chen, K P Dohrman, C L Isaacson, D M Fitzgerald, E A |
| description | What is believed to be the first InGaP/GaAs heterojunction bipolar transistor grown on SiGe/Si substrate is reported. The collectoremitter offset voltage and the knee voltage of the device are ∼150 mV and |
| format | Article |
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The collectoremitter offset voltage and the knee voltage of the device are ∼150 mV and <1 V, respectively. The maximum gain of the device is ∼25 at collector current of ∼100 mA. The collector and base ideality factor are ∼1.01 and ∼1.4, respectively. These results show the good potential for integrating the InGaP/GaAs heterojunction bipolar transistor on Si substrate using the compositionally graded SiGe buffer layer approach.</description><identifier>ISSN: 0013-5194</identifier><identifier>EISSN: 1350-911X</identifier><identifier>CODEN: ELLEAK</identifier><language>eng</language><publisher>Stevenage: John Wiley & Sons, Inc</publisher><subject>Electric potential ; Gallium arsenide ; Gallium arsenides ; Heterojunction bipolar transistors ; Semiconductor devices ; Silicon germanides ; Silicon substrates ; Voltage</subject><ispartof>Electronics letters, 2008-01, Vol.44 (3), p.1-1</ispartof><rights>Copyright The Institution of Engineering & Technology Jan 31, 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Lew, K L</creatorcontrib><creatorcontrib>Yoon, S F</creatorcontrib><creatorcontrib>Tanoto, H</creatorcontrib><creatorcontrib>Chen, K P</creatorcontrib><creatorcontrib>Dohrman, C L</creatorcontrib><creatorcontrib>Isaacson, D M</creatorcontrib><creatorcontrib>Fitzgerald, E A</creatorcontrib><title>InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer</title><title>Electronics letters</title><description>What is believed to be the first InGaP/GaAs heterojunction bipolar transistor grown on SiGe/Si substrate is reported. The collectoremitter offset voltage and the knee voltage of the device are ∼150 mV and <1 V, respectively. The maximum gain of the device is ∼25 at collector current of ∼100 mA. The collector and base ideality factor are ∼1.01 and ∼1.4, respectively. These results show the good potential for integrating the InGaP/GaAs heterojunction bipolar transistor on Si substrate using the compositionally graded SiGe buffer layer approach.</description><subject>Electric potential</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Heterojunction bipolar transistors</subject><subject>Semiconductor devices</subject><subject>Silicon germanides</subject><subject>Silicon substrates</subject><subject>Voltage</subject><issn>0013-5194</issn><issn>1350-911X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNpdjk1LAzEQhoMoWKv_IeDFy2I-d5NjKboWCgr24K0m3YndZU3WJEvx3xvQk6fhneeZ4T1DC8olqTSlb-doQQjllaRaXKKrlIYSmdbNAr1vfGte7luzSvgIGWIYZn_IffDY9lMYTcQ5Gp_6lEPEHzGcPC7stcdptqmgDPjU52PZtFC46aDDdnYOIh7NN8RrdOHMmODmby7R7vFht36qts_tZr3aVlNNVSUsV0xxVhNqiW2MokJrbp1kgnJnQdZak8Y4RTUjkgoQjHTCmEbyWpXAl-ju9-0Uw9cMKe8_-3SAcTQewpz2tC5XQtZSFfX2nzqEOfpSrlhMCiWIUPwHE8xd5A</recordid><startdate>20080131</startdate><enddate>20080131</enddate><creator>Lew, K L</creator><creator>Yoon, S F</creator><creator>Tanoto, H</creator><creator>Chen, K P</creator><creator>Dohrman, C L</creator><creator>Isaacson, D M</creator><creator>Fitzgerald, E A</creator><general>John Wiley & Sons, Inc</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JQ2</scope><scope>K7-</scope><scope>L6V</scope><scope>M7S</scope><scope>P5Z</scope><scope>P62</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>7QQ</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20080131</creationdate><title>InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer</title><author>Lew, K L ; Yoon, S F ; Tanoto, H ; Chen, K P ; Dohrman, C L ; Isaacson, D M ; Fitzgerald, E A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p618-4b382832601b0b7a814993bf52413fbe569907af81920514e420d4aa75368e423</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Electric potential</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Heterojunction bipolar transistors</topic><topic>Semiconductor devices</topic><topic>Silicon germanides</topic><topic>Silicon substrates</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lew, K L</creatorcontrib><creatorcontrib>Yoon, S F</creatorcontrib><creatorcontrib>Tanoto, H</creatorcontrib><creatorcontrib>Chen, K P</creatorcontrib><creatorcontrib>Dohrman, C L</creatorcontrib><creatorcontrib>Isaacson, D M</creatorcontrib><creatorcontrib>Fitzgerald, E A</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Computer Science Collection</collection><collection>Computer Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Electronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lew, K L</au><au>Yoon, S F</au><au>Tanoto, H</au><au>Chen, K P</au><au>Dohrman, C L</au><au>Isaacson, D M</au><au>Fitzgerald, E A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer</atitle><jtitle>Electronics letters</jtitle><date>2008-01-31</date><risdate>2008</risdate><volume>44</volume><issue>3</issue><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>0013-5194</issn><eissn>1350-911X</eissn><coden>ELLEAK</coden><abstract>What is believed to be the first InGaP/GaAs heterojunction bipolar transistor grown on SiGe/Si substrate is reported. The collectoremitter offset voltage and the knee voltage of the device are ∼150 mV and <1 V, respectively. The maximum gain of the device is ∼25 at collector current of ∼100 mA. The collector and base ideality factor are ∼1.01 and ∼1.4, respectively. These results show the good potential for integrating the InGaP/GaAs heterojunction bipolar transistor on Si substrate using the compositionally graded SiGe buffer layer approach.</abstract><cop>Stevenage</cop><pub>John Wiley & Sons, Inc</pub><tpages>1</tpages></addata></record> |
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| ispartof | Electronics letters, 2008-01, Vol.44 (3), p.1-1 |
| issn | 0013-5194 1350-911X |
| language | eng |
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| source | Alma/SFX Local Collection |
| subjects | Electric potential Gallium arsenide Gallium arsenides Heterojunction bipolar transistors Semiconductor devices Silicon germanides Silicon substrates Voltage |
| title | InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer |
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