InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer

InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer

What is believed to be the first InGaP/GaAs heterojunction bipolar transistor grown on SiGe/Si substrate is reported. The collectoremitter offset voltage and the knee voltage of the device are ∼150 mV and

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Bibliographische Detailangaben
Veröffentlicht in:Electronics letters 2008-01, Vol.44 (3), p.1-1
Hauptverfasser: Lew, K L, Yoon, S F, Tanoto, H, Chen, K P, Dohrman, C L, Isaacson, D M, Fitzgerald, E A
Format: Artikel
Sprache:eng
Schlagworte:
Electric potential
Gallium arsenide
Gallium arsenides
Heterojunction bipolar transistors
Semiconductor devices
Silicon germanides
Silicon substrates
Voltage
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Zusammenfassung:What is believed to be the first InGaP/GaAs heterojunction bipolar transistor grown on SiGe/Si substrate is reported. The collectoremitter offset voltage and the knee voltage of the device are ∼150 mV and
ISSN:0013-5194
1350-911X