Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes
Very low threshold current density InGaAs/GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1,200 mu m is centred at 1337.2 nm; the threshold current density is 205...
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| Veröffentlicht in: | Electronics letters 2008-03, Vol.44 (7), p.1-1 |
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| container_title | Electronics letters |
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| creator | Wu, D Wang, H Wu, B Ni, H Huang, S Xiong, Y Wang, P Han, Q Niu, Z Tangring, I Wang, S M |
| description | Very low threshold current density InGaAs/GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1,200 mu m is centred at 1337.2 nm; the threshold current density is 205 A/cm2 at room temperature under continuous-wave operation. |
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The lasing wavelength of the ridge waveguide laser diode with cavity length of 1,200 mu m is centred at 1337.2 nm; the threshold current density is 205 A/cm2 at room temperature under continuous-wave operation.</description><identifier>ISSN: 0013-5194</identifier><identifier>EISSN: 1350-911X</identifier><language>eng</language><subject>Density ; Diodes ; Gallium arsenide ; Gallium arsenides ; Lasing ; Metamorphic ; Quantum well lasers ; Threshold currents</subject><ispartof>Electronics letters, 2008-03, Vol.44 (7), p.1-1</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784</link.rule.ids></links><search><creatorcontrib>Wu, D</creatorcontrib><creatorcontrib>Wang, H</creatorcontrib><creatorcontrib>Wu, B</creatorcontrib><creatorcontrib>Ni, H</creatorcontrib><creatorcontrib>Huang, S</creatorcontrib><creatorcontrib>Xiong, Y</creatorcontrib><creatorcontrib>Wang, P</creatorcontrib><creatorcontrib>Han, Q</creatorcontrib><creatorcontrib>Niu, Z</creatorcontrib><creatorcontrib>Tangring, I</creatorcontrib><creatorcontrib>Wang, S M</creatorcontrib><title>Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes</title><title>Electronics letters</title><description>Very low threshold current density InGaAs/GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. 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The lasing wavelength of the ridge waveguide laser diode with cavity length of 1,200 mu m is centred at 1337.2 nm; the threshold current density is 205 A/cm2 at room temperature under continuous-wave operation.</abstract></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0013-5194 |
| ispartof | Electronics letters, 2008-03, Vol.44 (7), p.1-1 |
| issn | 0013-5194 1350-911X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1651442309 |
| source | Alma/SFX Local Collection |
| subjects | Density Diodes Gallium arsenide Gallium arsenides Lasing Metamorphic Quantum well lasers Threshold currents |
| title | Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes |
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