Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes

Low threshold current density 1.3 mu m metamorphic InGaAs/GaAs quantum well laser diodes

Very low threshold current density InGaAs/GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1,200 mu m is centred at 1337.2 nm; the threshold current density is 205...

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Veröffentlicht in:Electronics letters 2008-03, Vol.44 (7), p.1-1
Hauptverfasser: Wu, D, Wang, H, Wu, B, Ni, H, Huang, S, Xiong, Y, Wang, P, Han, Q, Niu, Z, Tangring, I, Wang, S M
Format: Artikel
Sprache:eng
Schlagworte:
Density
Diodes
Gallium arsenide
Gallium arsenides
Lasing
Metamorphic
Quantum well lasers
Threshold currents
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Zusammenfassung:Very low threshold current density InGaAs/GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1,200 mu m is centred at 1337.2 nm; the threshold current density is 205 A/cm2 at room temperature under continuous-wave operation.
ISSN:0013-5194
1350-911X