Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band

We report on photonic frequency double-mixing conversion utilizing a graphene-channel FET (G-FET). Optoelectronic properties of graphene are exploited to perform single-chip photonic double-mixing functionality, which is greatly advantageous in future broadband technological conversion between optic...

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Veröffentlicht in:Solid-state electronics 2015-01, Vol.103, p.216-221
Hauptverfasser: Kawasaki, Tetsuya, Sugawara, Kenta, Dobroiu, Adrian, Eto, Takanori, Kurita, Yuki, Kojima, Kazuki, Yabe, Yuhei, Sugiyama, Hiroki, Watanabe, Takayuki, Suemitsu, Tetsuya, Ryzhii, Victor, Iwatsuki, Katsumi, Fukada, Youichi, Kani, Jun-ichi, Terada, Jun, Yoshimoto, Naoto, Kawahara, Kenji, Ago, Hiroki, Otsuji, Taiichi
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Sprache:eng
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Zusammenfassung:We report on photonic frequency double-mixing conversion utilizing a graphene-channel FET (G-FET). Optoelectronic properties of graphene are exploited to perform single-chip photonic double-mixing functionality, which is greatly advantageous in future broadband technological conversion between optical fiber and sub-terahertz wireless communications. A 1GHz modulation signal on a 125GHz carrier is electrically input to the gate, whereas a 1.58μm dual wavelength CW laser beam having a frequency difference of 112.5GHz impinges on the G-FET. The G-FET works as a photomixer generating a 112.5GHz local signal which is then electrically mixed to the 1GHz modulated 125GHz carrier signal, resulting in the down-conversion of the 1GHz signal to a 12.5GHz intermediate frequency (IF) signal.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2014.07.009