1V NOR Flash memory employing inductor merged within package

A NOR Flash memory fully functional at 1 V is demonstrated, based on an inductor built directly into the package. A ferromagnetic nucleus is wound by means of the bonding wires, and the first package substrate metal layer. The magnetic field does not affect the system since it is strictly confined i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Electronics letters 2007-05, Vol.43 (10), p.1-1
Hauptverfasser: Pulici, P, Campardo, G, Vanalli, G P, Stoppino, P P, Lessio, T, Vigilante, A, Losavio, A, Ripamonti, G
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A NOR Flash memory fully functional at 1 V is demonstrated, based on an inductor built directly into the package. A ferromagnetic nucleus is wound by means of the bonding wires, and the first package substrate metal layer. The magnetic field does not affect the system since it is strictly confined into the toroidal nucleus. The whole system is enclosed into a standard BGA package 8 x 14 x 1.4 mm with 88 balls.
ISSN:0013-5194
1350-911X