Axial distribution of deep-level defects in as-grown CdZnTe: In ingots and their effects on the material's electrical properties

We investigated the distribution of deep-level defects in CdZnTe:In ingots along the growth direction using thermally stimulated current (TSC) spectra. Higher concentration of Te antisite-related deep donors were found in the tail region due to Te enrichment in the melt as solidification proceeded. The compensation between (ProQuest: Formulae and/or non-USASCII text omitted) defects and Cd vacancies results in low concentration of net free electrons. High resistivity with n-type conduction was demonstrated from the I-V analysis. Hall mobility is lower in the tail due to higher concentration of Te antisite-related deep donors.