SiC Epi-Channel Lateral MOSFETs

SiC Epi-Channel Lateral MOSFETs

SiC lateral MOSFETs with multi-layers epi-channels were studied in this work. The epi-channel with a high concentration n-type epilayer sandwiched by two lightly doped p-type layers showed a maximum field effect mobility of 17 cm2/V.s, improved from 1.53 cm2/V.s of devices without epi-channels. Thes...

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Bibliographische Detailangaben
Hauptverfasser: Bakowski, Mietek, Reshanov, Sergey A., Chiu, Ting Yu, Huang, Chih Fang, Lee, Lurng Shehng, Wei, Jeng Hua, Schöner, Adolf, Yen, Cheng Tyng, Lee, Chwan Ying, Hung, Chien Chung
Format: Tagungsbericht
Sprache:eng
Schlagworte:
4H-SiC
Buried channel
Buried channels
Carrier mobility
Devices
Field-effect mobilities
Lateral
Lateral MOSFETs
Lightly doped
Materials science
Mobility
MOS-FET
MOSFET
MOSFET devices
MOSFETs
Multilayers
P-type layers
Silicon carbide
Threshold voltage
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Zusammenfassung:SiC lateral MOSFETs with multi-layers epi-channels were studied in this work. The epi-channel with a high concentration n-type epilayer sandwiched by two lightly doped p-type layers showed a maximum field effect mobility of 17 cm2/V.s, improved from 1.53 cm2/V.s of devices without epi-channels. These devices are normally-off with an average threshold voltage of 1.34V.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.778-780.927