Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC

We studied the effect of rotation speed of seed crystal on the growth rate during the solution growth of SiC. The growth rate increased with increasing rotation speed of the seed crystal. The increase in the growth rate was observed in relatively wide range of carbon concentration. According to the numerical simulation, the carbon concentration gradient near the growth interface under 150 rpm condition is larger than 20 rpm (ACRT) condition. This indicates that increase in the growth rate is caused by the increase in the carbon concentration gradient of the diffusion layer.