A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance

A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance

A breakdown of a conventional trench SiC-MOSFET is caused by oxide breakdown at the bottom of the trench. We have fabricated a novel trench SiC-MOSFET with buried p+ regions and demonstrated the high breakdown voltage of 1700 V and the specific on-resistance of 3.5 mΩcm2.

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Veröffentlicht in:Materials science forum 2014-02, Vol.778-780, p.907-910
Hauptverfasser: Sakai, Mitsuhiko, Hiratsuka, Kenji, Wada, Keiji, Mikamura, Yasuki, Hiyoshi, Toru, Nishiguchi, Masanori, Hatayama, Tomoaki, Tamaso, Hideto, Masuda, Takeyoshi, Saito, Yu, Yano, Hiroshi
Format: Artikel
Sprache:eng
Schlagworte:
Avalanches
Breakdown
Electric potential
Materials science
MOSFETs
Oxides
Trenches
Voltage
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Zusammenfassung:A breakdown of a conventional trench SiC-MOSFET is caused by oxide breakdown at the bottom of the trench. We have fabricated a novel trench SiC-MOSFET with buried p+ regions and demonstrated the high breakdown voltage of 1700 V and the specific on-resistance of 3.5 mΩcm2.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.778-780.907