Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC

This paper deals with the comparison of several MOS structures with different rapid thermal oxidation processes (RTO) carried out on Off and On-axis SiC material. A first set contains MOS capacitance structures on n-epitaxial layers, while a second set of MOS capacitance are built on p-implanted layers. Both sets include On and Off-Axis angle cuts. Furthermore, n-MOSFETs have been fabricated on On-axis p-implanted layers with the best oxidation process selected from the MOS capacitance study. The final objective is to show the performances of these On-axis p-implanted n-MOSFETs and to evidence the associated lower surface roughness at the SiO2/SiC interface.