1700V, 5.5mohm-cm super(2) 4H-SiC DMOSFET with Stable 225[degrees]C Operation

We report a 1700V, 5.5 mohm-cm super(2) 4H-SiC DMOSFET capable of 225[degrees]C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mohm-cm super(2) at 225[degrees]C, an increase of only 60% compared to the room temperature value. The low specific on-resistance...

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Veröffentlicht in:	Materials science forum 2014-02, Vol.778-780, p.903-906
Hauptverfasser:	Matocha, Kevin, Chatty, Kiran, Banerjee, Sujit, Rowland, Larry B
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Devices Gates Materials science Stresses Threshold voltage
Online-Zugang:	Volltext
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