1700V, 5.5mohm-cm super(2) 4H-SiC DMOSFET with Stable 225[degrees]C Operation

We report a 1700V, 5.5 mohm-cm super(2) 4H-SiC DMOSFET capable of 225[degrees]C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mohm-cm super(2) at 225[degrees]C, an increase of only 60% compared to the room temperature value. The low specific on-resistance at high temperatures enables a smaller die size for high temperature operation. Under a negative gate bias temperature stress (BTS) at V sub(GS)=-15 V at 225[degrees]C for 20 minutes, the devices show a threshold voltage shift of Delta V sub(TH)=-0.25 V demonstrating one of the key device reliability requirements for high temperature operation.