Development of RAF Quality 150mm 4H-SiC Wafer

Development of RAF Quality 150mm 4H-SiC Wafer

We have developed RAF (Repeated a-face) growth method which is high quality bulk crystal growth technology [1, 2]. A block crystal more than 150 mm square size was produced by the RAF growth method. Since c-face growth crystal was produced on the seed obtained from the block crystal, high quality 15...

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Veröffentlicht in:Materials science forum 2014-02, Vol.778-780, p.17-21
Hauptverfasser: Kondo, Hiroyuki, Kobayashi, Masakazu, Ooya, Nobuyuki, Yamada, Masanori, Gunjishima, I., Kozawa, T., Takaba, Hidetaka, Urakami, Yasushi, Sugiyama, Naohiro, Sato, Takayuki, Matsuse, Akihiro, Shigeto, K., Yamauchi, Shoichi, Hirose, Fusao, Onda, Shoichi, Masuda, Takashi, Okamoto, Takeshi
Format: Artikel
Sprache:eng
Schlagworte:
Blocking
Crystal growth
Crystals
Materials science
Seeds
Wafers
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Beschreibung
Zusammenfassung:We have developed RAF (Repeated a-face) growth method which is high quality bulk crystal growth technology [1, 2]. A block crystal more than 150 mm square size was produced by the RAF growth method. Since c-face growth crystal was produced on the seed obtained from the block crystal, high quality 150mm 4H-SiC wafer was achieved. This paper reports the results of the quality evaluation.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.778-780.17