Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6 x 150 mm Warm-Wall Planetary Reactor
Latest results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10xl00-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce the cost per unit area for SiC epitaxial layers, inc...
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| Veröffentlicht in: | Materials science forum 2014-02, Vol.778-780, p.113-116 |
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| creator | Burk, A A Tsvetkov, D O'Loughlin, Michael J Ustin, S Garrett, L Powell, A R Seaman, J Partin, N |
| description | Latest results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10xl00-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce the cost per unit area for SiC epitaxial layers, increasing the market penetration of already successful commercial SiC Schottky and MOSFET devices [1]. Increased growth rates of 30-40 micron/hr and short |
| doi_str_mv | 10.4028/www.scientific.net/MSF.778-780.113 |
| format | Article |
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| source | Scientific.net Journals |
| subjects | Doping Epitaxial growth Epitaxial layers Morphology Reactors Silicon carbide Variability Wafers |
| title | Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6 x 150 mm Warm-Wall Planetary Reactor |
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