Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6 x 150 mm Warm-Wall Planetary Reactor

Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6 x 150 mm Warm-Wall Planetary Reactor

Latest results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10xl00-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce the cost per unit area for SiC epitaxial layers, inc...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials science forum 2014-02, Vol.778-780, p.113-116
Hauptverfasser: Burk, A A, Tsvetkov, D, O'Loughlin, Michael J, Ustin, S, Garrett, L, Powell, A R, Seaman, J, Partin, N
Format: Artikel
Sprache:eng
Schlagworte:
Doping
Epitaxial growth
Epitaxial layers
Morphology
Reactors
Silicon carbide
Variability
Wafers
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Latest results are presented for SiC-epitaxial growths employing a novel 6x150-mm/10xl00-mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor. The increased throughput offered by this reactor and 150-mm diameter wafers, is intended to reduce the cost per unit area for SiC epitaxial layers, increasing the market penetration of already successful commercial SiC Schottky and MOSFET devices [1]. Increased growth rates of 30-40 micron/hr and short
ISSN:0255-5476
DOI:10.4028/www.scientific.net/MSF.778-780.113