4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106

4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106

Preliminary results of 150mm SiC 4H 4°off have been obtained with the new 150mm automatic horizontal hot wall reactor PE1O6, using chlorinated chemistry (SiHCl3 + C2H4). A new injection system has been tested in two configurations and results will be shown in this paper. AFM surface roughness measur...

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Veröffentlicht in:Materials science forum 2014-02, Vol.778-780, p.121-124
Hauptverfasser: Puglisi, Marco, Camarda, Massimo, La Via, Francesco, Vecchio, Carmelo, Mauceri, Marco, Litrico, Grazia, Pecora, Antonino, Crippa, Danilo, Piluso, Nicolo’
Format: Artikel
Sprache:eng
Schlagworte:
Automation
Chlorination
Density
Horizontal
Reactors
Silicon carbide
Surface roughness
Walls
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Zusammenfassung:Preliminary results of 150mm SiC 4H 4°off have been obtained with the new 150mm automatic horizontal hot wall reactor PE1O6, using chlorinated chemistry (SiHCl3 + C2H4). A new injection system has been tested in two configurations and results will be shown in this paper. AFM surface roughness measurements and epi defect density have been reported.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.778-780.121