Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy

We demonstrate a simple method for direct observation of the stacking orientation on 4H/6H-SiC {0001} surfaces by low-voltage SEM. The difference in the direction of the stacking orientation is observed as SEM contrast. By utilizing this technique, the bond configuration at {1-10n} steps can be dete...

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Veröffentlicht in:	Materials science forum 2014-02, Vol.778-780, p.507-510
Hauptverfasser:	Kaneko, Tadaaki, Ohtani, Noboru, Ashida, Koji, Kutsuma, Yasunori, Kajino, Tomonori
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Sprache:	eng
Schlagworte:	Bonding Materials science Orientation Scanning electron microscopy Stacking
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description	We demonstrate a simple method for direct observation of the stacking orientation on 4H/6H-SiC {0001} surfaces by low-voltage SEM. The difference in the direction of the stacking orientation is observed as SEM contrast. By utilizing this technique, the bond configuration at {1-10n} steps can be determined by the SEM contrast.
doi_str_mv	10.4028/www.scientific.net/MSF.778-780.507
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subjects	Bonding Materials science Orientation Scanning electron microscopy Stacking
title	Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy
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