Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy
We demonstrate a simple method for direct observation of the stacking orientation on 4H/6H-SiC {0001} surfaces by low-voltage SEM. The difference in the direction of the stacking orientation is observed as SEM contrast. By utilizing this technique, the bond configuration at {1-10n} steps can be dete...
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Veröffentlicht in: | Materials science forum 2014-02, Vol.778-780, p.507-510 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We demonstrate a simple method for direct observation of the stacking orientation on 4H/6H-SiC {0001} surfaces by low-voltage SEM. The difference in the direction of the stacking orientation is observed as SEM contrast. By utilizing this technique, the bond configuration at {1-10n} steps can be determined by the SEM contrast. |
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ISSN: | 0255-5476 1662-9752 1662-9752 |
DOI: | 10.4028/www.scientific.net/MSF.778-780.507 |