Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Results are presented for epitaxial SiC layers grown on 100 mm and 150 mm wafers suitable for power devices by CVD using a VP2800WW multi-wafer reactor with 10×100mm and 6×150mm configurations. We have demonstrated continuous improvement in uniformity for thickness and doping, as well as in defect r...

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Veröffentlicht in:Materials science forum 2014-02, Vol.778-780, p.103-108
Hauptverfasser: Thomas, Bernd, Manning, Ian, Loboda, Mark J., Uchiyama, Junichi, Quast, Jeff P., Chung, Gil Yong, Hansen, Darren M., Zhang, Jie, Toth, Timothy J., Mueller, Stephan G.
Format: Artikel
Sprache:eng
Schlagworte:
Chemical vapor deposition
Density
Devices
Doping
Epitaxial layers
Reactors
Variability
Wafers
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Zusammenfassung:Results are presented for epitaxial SiC layers grown on 100 mm and 150 mm wafers suitable for power devices by CVD using a VP2800WW multi-wafer reactor with 10×100mm and 6×150mm configurations. We have demonstrated continuous improvement in uniformity for thickness and doping, as well as in defect reduction in standard epitaxy on 100 mm wafers. Thickness and doping sigma/mean values of
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.778-780.103