Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS
Distribution of chemical composition in nickel-based ohmic contacts to n-type 4H-SiC was investigated with XEDS mapping performed on plan-view and cross-sectional TEM samples. Obtained results indicate that local deviations in stoichiometry from that of Ni2Si phase significantly contribute to degrad...
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| Veröffentlicht in: | Materials science forum 2014-02, Vol.778-780, p.697-701 |
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| container_title | Materials science forum |
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| creator | Czerwiński, Andrzej Ratajczak, Jacek Piotrowska, Anna B. Kuchuk, Andrian V. Wzorek, Marek Borysiewicz, Michał A. Kątcki, Jerzy |
| description | Distribution of chemical composition in nickel-based ohmic contacts to n-type 4H-SiC was investigated with XEDS mapping performed on plan-view and cross-sectional TEM samples. Obtained results indicate that local deviations in stoichiometry from that of Ni2Si phase significantly contribute to degradation of surface morphology. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.778-780.697 |
| format | Article |
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| language | eng |
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| source | Scientific.net Journals |
| subjects | Contact Contact resistance Cross sections Deviation Microstructure Nickel Stoichiometry Transmission electron microscopy |
| title | Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS |
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