Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS

Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS

Distribution of chemical composition in nickel-based ohmic contacts to n-type 4H-SiC was investigated with XEDS mapping performed on plan-view and cross-sectional TEM samples. Obtained results indicate that local deviations in stoichiometry from that of Ni2Si phase significantly contribute to degrad...

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Veröffentlicht in:Materials science forum 2014-02, Vol.778-780, p.697-701
Hauptverfasser: Czerwiński, Andrzej, Ratajczak, Jacek, Piotrowska, Anna B., Kuchuk, Andrian V., Wzorek, Marek, Borysiewicz, Michał A., Kątcki, Jerzy
Format: Artikel
Sprache:eng
Schlagworte:
Contact
Contact resistance
Cross sections
Deviation
Microstructure
Nickel
Stoichiometry
Transmission electron microscopy
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Zusammenfassung:Distribution of chemical composition in nickel-based ohmic contacts to n-type 4H-SiC was investigated with XEDS mapping performed on plan-view and cross-sectional TEM samples. Obtained results indicate that local deviations in stoichiometry from that of Ni2Si phase significantly contribute to degradation of surface morphology.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.778-780.697